- Operating Temperature :
- Mounting Type :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
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128 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
643
In-stock
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Infineon Technologies | MOSFET P-CH 100V 15A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
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RFQ |
865
In-stock
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Infineon Technologies | MOSFET N-CH 85V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
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RFQ |
3,084
In-stock
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Infineon Technologies | MOSFET N-CH 100V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.2 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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RFQ |
3,896
In-stock
|
Infineon Technologies | MOSFET N-CH 85V 53A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
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RFQ |
3,587
In-stock
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Infineon Technologies | MOSFET N-CH 100V 53A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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RFQ |
1,813
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 53A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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RFQ |
3,246
In-stock
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Infineon Technologies | MOSFET N-CH 55V 5.2A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.2A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
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RFQ |
2,415
In-stock
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Infineon Technologies | MOSFET P-CH 60V 30A IPAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | |||
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RFQ |
1,992
In-stock
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Infineon Technologies | MOSFET N-CH 85V 53A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
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RFQ |
2,745
In-stock
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Infineon Technologies | MOSFET P-CH 30V 11A 3X3 PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.8W (Ta) | P-Channel | - | 30V | 11A (Ta), 24A (Tc) | 10 mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | 1543pF @ 25V | 10V, 20V | ±25V | |||
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RFQ |
3,533
In-stock
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Infineon Technologies | MOSFET P-CH 30V 11A 3X3 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.8W (Ta) | P-Channel | - | 30V | 11A (Ta), 24A (Tc) | 10 mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | 1543pF @ 25V | 10V, 20V | ±25V | |||
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RFQ |
1,764
In-stock
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Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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RFQ |
1,984
In-stock
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Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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RFQ |
2,377
In-stock
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Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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RFQ |
1,659
In-stock
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Infineon Technologies | MOSFET P-CH 60V 30A TO-252 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | |||
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RFQ |
2,226
In-stock
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Infineon Technologies | MOSFET P-CH 60V 30A DPAK | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | |||
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RFQ |
3,994
In-stock
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Infineon Technologies | MOSFET P-CH 60V 30A DPAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | |||
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RFQ |
3,311
In-stock
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Infineon Technologies | MOSFET P-CH 100V 15A TO220-3 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
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RFQ |
1,803
In-stock
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Infineon Technologies | MOSFET N-CH 100V TO-220 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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RFQ |
3,562
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
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RFQ |
1,426
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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RFQ |
3,386
In-stock
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Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,746
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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|
RFQ |
643
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 15A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
865
In-stock
|
Infineon Technologies | MOSFET N-CH 85V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
|
|
RFQ |
3,084
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.2 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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|
|
RFQ |
3,896
In-stock
|
Infineon Technologies | MOSFET N-CH 85V 53A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 100W (Tc) | N-Channel | - | 85V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3230pF @ 40V | 10V | ±20V | |||
|
|
|
RFQ |
3,587
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 53A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
|
|
RFQ |
1,813
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 53A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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|
RFQ |
1,433
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 15A TO252-3 | Automotive, AEC-Q101, SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
