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9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
701
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
865
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,145
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
701
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
865
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,145
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
701
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
865
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,145
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
