Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPA65R225C7XKSA1
Per Unit
$1.66
RFQ
RFQ
2,116
In-stock
Infineon Technologies MOSFET N-CH 650V TO220-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 29W (Tc) N-Channel - 650V 7A (Tc) 225 mOhm @ 4.8A, 10V 4V @ 240µA 20nC @ 10V 996pF @ 400V 10V ±20V
IPA65R225C7XKSA1
Per Unit
$1.66
RFQ
RFQ
2,116
In-stock
Infineon Technologies MOSFET N-CH 650V TO220-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 29W (Tc) N-Channel - 650V 7A (Tc) 225 mOhm @ 4.8A, 10V 4V @ 240µA 20nC @ 10V 996pF @ 400V 10V ±20V
IPA65R225C7XKSA1
Per Unit
$1.66
RFQ
RFQ
2,116
In-stock
Infineon Technologies MOSFET N-CH 650V TO220-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 29W (Tc) N-Channel - 650V 7A (Tc) 225 mOhm @ 4.8A, 10V 4V @ 240µA 20nC @ 10V 996pF @ 400V 10V ±20V