Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP80R600P7XKSA1
Per Unit
$1.91
RFQ
RFQ
3,016
In-stock
Infineon Technologies MOSFET N-CH 800V 8A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 60W (Tc) N-Channel - 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V
IPP80R600P7XKSA1
Per Unit
$1.91
RFQ
RFQ
3,016
In-stock
Infineon Technologies MOSFET N-CH 800V 8A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 60W (Tc) N-Channel - 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V
IPP80R600P7XKSA1
Per Unit
$1.91
RFQ
RFQ
3,016
In-stock
Infineon Technologies MOSFET N-CH 800V 8A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 60W (Tc) N-Channel - 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V