Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW65R048CFDAFKSA1
Per Unit
$16.71
RFQ
RFQ
3,900
In-stock
Infineon Technologies MOSFET N-CH 650V TO-247-3 Automotive, AEC-Q101, CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 500W (Tc) N-Channel - 650V 63.3A (Tc) 48 mOhm @ 29.4A, 10V 4.5V @ 2.9mA 270nC @ 10V 7440pF @ 100V 10V ±20V
IPW65R048CFDAFKSA1
Per Unit
$16.71
RFQ
RFQ
3,900
In-stock
Infineon Technologies MOSFET N-CH 650V TO-247-3 Automotive, AEC-Q101, CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 500W (Tc) N-Channel - 650V 63.3A (Tc) 48 mOhm @ 29.4A, 10V 4.5V @ 2.9mA 270nC @ 10V 7440pF @ 100V 10V ±20V