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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
3,822
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 68W (Tc) | N-Channel | - | 650V | 13A (Tc) | 130 mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | 1080pF @ 400V | 10V | ±20V | |||
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RFQ |
3,822
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 68W (Tc) | N-Channel | - | 650V | 13A (Tc) | 130 mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | 1080pF @ 400V | 10V | ±20V | |||
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|
RFQ |
3,822
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 13A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 68W (Tc) | N-Channel | - | 650V | 13A (Tc) | 130 mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | 1080pF @ 400V | 10V | ±20V | |||
