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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRFP064N	Per Unit $4.61	RFQ	PDF RFQ	2,621 In-stock	Infineon Technologies	MOSFET N-CH 55V 98A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	200W (Tc)	N-Channel	-	55V	110A (Tc)	8 mOhm @ 59A, 10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	10V	±20V
	IRFP064NPBF	Per Unit $2.86	RFQ	PDF RFQ	1,106 In-stock	Infineon Technologies	MOSFET N-CH 55V 110A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	200W (Tc)	N-Channel	-	55V	110A (Tc)	8 mOhm @ 59A, 10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	10V	±20V
	AUIRFP064N	Per Unit $4.61	RFQ	PDF RFQ	2,621 In-stock	Infineon Technologies	MOSFET N-CH 55V 98A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	200W (Tc)	N-Channel	-	55V	110A (Tc)	8 mOhm @ 59A, 10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	10V	±20V
	IRFP064NPBF	Per Unit $2.86	RFQ	PDF RFQ	1,106 In-stock	Infineon Technologies	MOSFET N-CH 55V 110A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	200W (Tc)	N-Channel	-	55V	110A (Tc)	8 mOhm @ 59A, 10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	10V	±20V

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