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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRF1324	Per Unit $2.24	RFQ	PDF RFQ	3,063 In-stock	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	24V	195A (Tc)	1.5 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	10V	±20V
	AUIRF1324	Per Unit $2.24	RFQ	PDF RFQ	3,063 In-stock	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	24V	195A (Tc)	1.5 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	10V	±20V
	IRF1324PBF	Per Unit $2.90	RFQ	PDF RFQ	1,247 In-stock	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	24V	195A (Tc)	1.5 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	10V	±20V
	AUIRF1324	Per Unit $2.24	RFQ	PDF RFQ	3,063 In-stock	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	24V	195A (Tc)	1.5 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	10V	±20V
	IRF1324PBF	Per Unit $2.90	RFQ	PDF RFQ	1,247 In-stock	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	-	24V	195A (Tc)	1.5 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	10V	±20V

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