- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
1,642
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 90A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 115W (Tc) | N-Channel | - | 25V | 90A (Tc) | 3.4 mOhm @ 60A, 10V | 2V @ 70µA | 41nC @ 5V | 5200pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,642
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 90A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 115W (Tc) | N-Channel | - | 25V | 90A (Tc) | 3.4 mOhm @ 60A, 10V | 2V @ 70µA | 41nC @ 5V | 5200pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,152
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,496
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
800
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,152
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,496
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
800
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,932
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,642
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 90A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 115W (Tc) | N-Channel | - | 25V | 90A (Tc) | 3.4 mOhm @ 60A, 10V | 2V @ 70µA | 41nC @ 5V | 5200pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,152
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,496
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
800
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,932
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
