Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
RFQ
690
In-stock
Infineon Technologies MOSFET N-CH 25V 25A HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V
Default Photo
RFQ
RFQ
690
In-stock
Infineon Technologies MOSFET N-CH 25V 25A HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V
IRF8252TRPBF-1
RFQ
RFQ
690
In-stock
Infineon Technologies MOSFET N-CH 25V 25A HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V