- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,758
In-stock
|
Infineon Technologies | MOSFET N CH 75V 195A TO247 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 517W (Tc) | N-Channel | - | 75V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.7V @ 250µA | 830nC @ 10V | 29550pF @ 25V | 6V, 10V | ±20V | |||
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|
RFQ |
2,931
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
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|
RFQ |
771
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 183A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,029
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
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|
|
RFQ |
3,758
In-stock
|
Infineon Technologies | MOSFET N CH 75V 195A TO247 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 517W (Tc) | N-Channel | - | 75V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.7V @ 250µA | 830nC @ 10V | 29550pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,931
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
771
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 183A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,029
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
3,441
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 183A TO220 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
3,758
In-stock
|
Infineon Technologies | MOSFET N CH 75V 195A TO247 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 517W (Tc) | N-Channel | - | 75V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.7V @ 250µA | 830nC @ 10V | 29550pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,931
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
771
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 183A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,029
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
|
|
RFQ |
3,441
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 183A TO220 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | |||
