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5 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
2,228
In-stock
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Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
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|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
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|
RFQ |
2,071
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | 10V | ±20V | |||
|
|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
|
|
RFQ |
2,071
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | 10V | ±20V | |||
