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8 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
753
In-stock
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Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
3,811
In-stock
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Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
3,086
In-stock
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Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
2,540
In-stock
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Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
RFQ |
753
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
3,811
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
RFQ |
3,086
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
RFQ |
2,540
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | |||
