- Part Status :
- Packaging :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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18 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,786
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
2,047
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
|
RFQ |
1,786
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
|
RFQ |
2,047
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
1,182
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
RFQ |
1,383
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
1,711
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
3,324
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
RFQ |
1,622
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
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RFQ |
1,009
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
1,786
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
2,047
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
1,182
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
1,383
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
1,711
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
3,324
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
1,622
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
|
RFQ |
1,009
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
