- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
2,384
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 37A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,883
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 37A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,947
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 49A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 40W (Tc) | N-Channel | - | 20V | 49A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,384
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 37A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,883
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 37A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,947
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 49A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 40W (Tc) | N-Channel | - | 20V | 49A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,384
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 37A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,883
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 37A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 35W (Tc) | N-Channel | - | 20V | 37A (Tc) | 15 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,947
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 49A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 40W (Tc) | N-Channel | - | 20V | 49A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | 4.5V, 10V | ±20V | |||
