Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLU4343
RFQ
RFQ
2,804
In-stock
Infineon Technologies MOSFET N-CH 55V 26A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V
IRLU4343PBF
RFQ
RFQ
715
In-stock
Infineon Technologies MOSFET N-CH 55V 26A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V
IRLU4343
RFQ
RFQ
2,804
In-stock
Infineon Technologies MOSFET N-CH 55V 26A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V
IRLU4343PBF
RFQ
RFQ
715
In-stock
Infineon Technologies MOSFET N-CH 55V 26A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V
IRLU4343
RFQ
RFQ
2,804
In-stock
Infineon Technologies MOSFET N-CH 55V 26A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V
IRLU4343PBF
RFQ
RFQ
715
In-stock
Infineon Technologies MOSFET N-CH 55V 26A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 79W (Tc) N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V