- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
1,809
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 57A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 48W (Tc) | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,680
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 81A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 63W (Tc) | N-Channel | - | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,809
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 57A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 48W (Tc) | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,680
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 81A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 63W (Tc) | N-Channel | - | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,809
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 57A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 48W (Tc) | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,680
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 81A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 63W (Tc) | N-Channel | - | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | |||
