- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
15 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,272
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
2,788
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
1,795
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
2,016
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
3,382
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
1,272
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
2,788
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
1,795
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
2,016
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
3,382
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
1,272
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
2,788
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
1,795
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
|
|
RFQ |
2,016
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
3,382
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 75A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 88W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | 2.8V, 10V | ±12V | |||
