Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI80N06S208AKSA1
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2,198
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Infineon Technologies MOSFET N-CH 55V 80A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 215W (Tc) N-Channel - 55V 80A (Tc) 8 mOhm @ 58A, 10V 4V @ 150µA 96nC @ 10V 2860pF @ 25V 10V ±20V
IPI100N06S3-04
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3,552
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Infineon Technologies MOSFET N-CH 55V 100A TO-262 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 55V 100A (Tc) 4.4 mOhm @ 80A, 10V 4V @ 150µA 314nC @ 10V 14230pF @ 25V 10V ±20V
IPI80N06S208AKSA1
RFQ
RFQ
2,198
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 215W (Tc) N-Channel - 55V 80A (Tc) 8 mOhm @ 58A, 10V 4V @ 150µA 96nC @ 10V 2860pF @ 25V 10V ±20V
IPI100N06S3-04
RFQ
RFQ
3,552
In-stock
Infineon Technologies MOSFET N-CH 55V 100A TO-262 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 55V 100A (Tc) 4.4 mOhm @ 80A, 10V 4V @ 150µA 314nC @ 10V 14230pF @ 25V 10V ±20V
IPI80N06S208AKSA1
RFQ
RFQ
2,198
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 215W (Tc) N-Channel - 55V 80A (Tc) 8 mOhm @ 58A, 10V 4V @ 150µA 96nC @ 10V 2860pF @ 25V 10V ±20V
IPI100N06S3-04
RFQ
RFQ
3,552
In-stock
Infineon Technologies MOSFET N-CH 55V 100A TO-262 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel - 55V 100A (Tc) 4.4 mOhm @ 80A, 10V 4V @ 150µA 314nC @ 10V 14230pF @ 25V 10V ±20V