Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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SI5515CDC-T1-E3
Per Unit
$0.99
RFQ
RFQ
3,015
In-stock
Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8 TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 3.1W - N and P-Channel Logic Level Gate 20V 4A (Tc) 36 mOhm @ 6A, 4.5V 800mV @ 250µA 11.3nC @ 5V 632pF @ 10V
SI5513CDC-T1-E3
Per Unit
$0.76
RFQ
RFQ
2,847
In-stock
Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8 TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 3.1W - N and P-Channel Logic Level Gate 20V 4A, 3.7A 55 mOhm @ 4.3A, 4.5V 1.5V @ 250µA 4.2nC @ 5V 285pF @ 10V
SI5515CDC-T1-E3
Per Unit
$0.99
RFQ
RFQ
3,015
In-stock
Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8 TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 3.1W - N and P-Channel Logic Level Gate 20V 4A (Tc) 36 mOhm @ 6A, 4.5V 800mV @ 250µA 11.3nC @ 5V 632pF @ 10V
SI5513CDC-T1-E3
Per Unit
$0.76
RFQ
RFQ
2,847
In-stock
Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8 TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 3.1W - N and P-Channel Logic Level Gate 20V 4A, 3.7A 55 mOhm @ 4.3A, 4.5V 1.5V @ 250µA 4.2nC @ 5V 285pF @ 10V