Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Diodes Incorporated MOSFET 2N/2P-CHA 60V 3.1A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A, 2.4A 100 mOhm @ 1A, 10V 3V @ 250µA 11.5nC @ 10V 731pF @ 20V
FDS8935
Per Unit
$1.66
RFQ
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ON Semiconductor MOSFET 2P-CH 80V 2.1A 8SOIC PowerTrench® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2.1A 183 mOhm @ 2.1A, 10V 3V @ 250µA 19nC @ 10V 879pF @ 40V
DMHC6070LSD-13
Per Unit
$1.24
RFQ
RFQ
3,578
In-stock
Diodes Incorporated MOSFET 2N/2P-CHA 60V 3.1A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A, 2.4A 100 mOhm @ 1A, 10V 3V @ 250µA 11.5nC @ 10V 731pF @ 20V
FDS8935
Per Unit
$1.66
RFQ
RFQ
1,082
In-stock
ON Semiconductor MOSFET 2P-CH 80V 2.1A 8SOIC PowerTrench® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2.1A 183 mOhm @ 2.1A, 10V 3V @ 250µA 19nC @ 10V 879pF @ 40V