Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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PHC2300,118
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$1.00
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2,926
In-stock
Nexperia USA Inc. MOSFET N/P-CH 300V 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO N and P-Channel Logic Level Gate 300V 340mA, 235mA 6 Ohm @ 170mA, 10V 2V @ 1mA 6.24nC @ 10V 102pF @ 50V
Default Photo
Per Unit
$1.24
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RFQ
3,578
In-stock
Diodes Incorporated MOSFET 2N/2P-CHA 60V 3.1A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A, 2.4A 100 mOhm @ 1A, 10V 3V @ 250µA 11.5nC @ 10V 731pF @ 20V
PHC2300,118
Per Unit
$1.00
RFQ
RFQ
2,926
In-stock
Nexperia USA Inc. MOSFET N/P-CH 300V 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO N and P-Channel Logic Level Gate 300V 340mA, 235mA 6 Ohm @ 170mA, 10V 2V @ 1mA 6.24nC @ 10V 102pF @ 50V
DMHC6070LSD-13
Per Unit
$1.24
RFQ
RFQ
3,578
In-stock
Diodes Incorporated MOSFET 2N/2P-CHA 60V 3.1A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.6W 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A, 2.4A 100 mOhm @ 1A, 10V 3V @ 250µA 11.5nC @ 10V 731pF @ 20V