- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
832
In-stock
|
ON Semiconductor | MOSFET 2P-CH 30V 5.5A ECH8 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1.5W | 8-ECH | 2 P-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 39 mOhm @ 2.5A, 10V | - | 13nC @ 10V | 600pF @ 10V | |||
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|
RFQ |
959
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 19A/31A | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 3.1W | 8-DFN-EP (5x6) | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 19A, 31A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | 820pF @ 15V | |||
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|
RFQ |
2,699
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 30V TSOT26 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 840mW | TSOT-26 | N and P-Channel | Logic Level Gate | 30V | 3.4A, 2.8A | 60 mOhm @ 3.1A, 10V | 2.3V @ 250µA | 13nC @ 10V | 400pF @ 15V | |||
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|
RFQ |
2,656
In-stock
|
Taiwan Semiconductor Corporation | MOSFET 2 N-CH 30V 5.9A 8SOP | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3W | 8-SOP | 2 N-Channel (Dual) | Standard | 30V | 5.9A (Ta) | 36 mOhm @ 5.9A, 10V | 3V @ 250µA | 13nC @ 10V | 610pF @ 15V | |||
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|
RFQ |
2,029
In-stock
|
Rohm Semiconductor | MOSFET 2P-CH 30V 4A TSMT8 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 550mW | TSMT8 | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4A | 56 mOhm @ 4A, 10V | 2.5V @ 1mA | 13nC @ 10V | 800pF @ 10V | |||
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RFQ |
3,284
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 30V TSOT23-6 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 840mW | TSOT-23-6 | N and P-Channel | Logic Level Gate | 30V | 3.4A, 2.8A | 60 mOhm @ 3.1A, 10V | 2.3V @ 250µA | 13nC @ 10V | 400pF @ 15V | |||
|
|
RFQ |
3,978
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 19A/26A | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 3.1W | 8-DFN-EP (5x6) | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 19A, 26A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | 820pF @ 15V | |||
|
|
RFQ |
832
In-stock
|
ON Semiconductor | MOSFET 2P-CH 30V 5.5A ECH8 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1.5W | 8-ECH | 2 P-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 39 mOhm @ 2.5A, 10V | - | 13nC @ 10V | 600pF @ 10V | |||
|
|
RFQ |
959
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 19A/31A | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 3.1W | 8-DFN-EP (5x6) | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 19A, 31A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | 820pF @ 15V | |||
|
|
RFQ |
2,699
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 30V TSOT26 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 840mW | TSOT-26 | N and P-Channel | Logic Level Gate | 30V | 3.4A, 2.8A | 60 mOhm @ 3.1A, 10V | 2.3V @ 250µA | 13nC @ 10V | 400pF @ 15V | |||
|
|
RFQ |
2,656
In-stock
|
Taiwan Semiconductor Corporation | MOSFET 2 N-CH 30V 5.9A 8SOP | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3W | 8-SOP | 2 N-Channel (Dual) | Standard | 30V | 5.9A (Ta) | 36 mOhm @ 5.9A, 10V | 3V @ 250µA | 13nC @ 10V | 610pF @ 15V | |||
|
|
RFQ |
2,029
In-stock
|
Rohm Semiconductor | MOSFET 2P-CH 30V 4A TSMT8 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 550mW | TSMT8 | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4A | 56 mOhm @ 4A, 10V | 2.5V @ 1mA | 13nC @ 10V | 800pF @ 10V | |||
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|
RFQ |
3,284
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 30V TSOT23-6 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 840mW | TSOT-23-6 | N and P-Channel | Logic Level Gate | 30V | 3.4A, 2.8A | 60 mOhm @ 3.1A, 10V | 2.3V @ 250µA | 13nC @ 10V | 400pF @ 15V | |||
|
|
RFQ |
3,978
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 19A/26A | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 3.1W | 8-DFN-EP (5x6) | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 19A, 26A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | 820pF @ 15V | |||
