Power - Max :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
NTLJD3115PTAG
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In-stock
ON Semiconductor MOSFET 2P-CH 20V 2.3A 6-WDFN - Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 710mW 6-WDFN (2x2) 2 P-Channel (Dual) Logic Level Gate 20V 2.3A 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V
IRF9953TR
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1,517
In-stock
Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
IRF9953
RFQ
RFQ
3,621
In-stock
Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V