- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
709
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | |||
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RFQ |
1,100
In-stock
|
Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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|
RFQ |
3,131
In-stock
|
Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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|
RFQ |
3,190
In-stock
|
Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | |||
|
|
RFQ |
709
In-stock
|
Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | |||
|
|
RFQ |
1,100
In-stock
|
Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
|
|
RFQ |
3,131
In-stock
|
Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
|
|
RFQ |
3,190
In-stock
|
Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | |||
