- Series :
- Supplier Device Package :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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22 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
2,708
In-stock
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ON Semiconductor | MOSFET 2P-CH 30V 2.34A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 730mW | 8-SOIC | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.34A | 85 mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | |||
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RFQ |
709
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | |||
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RFQ |
3,517
In-stock
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ON Semiconductor | MOSFET N/P-CH 30V 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | N and P-Channel | Logic Level Gate | 30V | 3.7A, 2.9A | 80 mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 320pF @ 10V | |||
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RFQ |
3,346
In-stock
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ON Semiconductor | MOSFET 2P-CH 30V 2.34A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 730mW | 8-SOIC | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.34A | 85 mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | |||
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RFQ |
2,621
In-stock
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Vishay Siliconix | MOSFET 2N-CH 30V 8A 8-SOIC | LITTLE FOOT® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.9W | 8-SO | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 8A | 20 mOhm @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | 950pF @ 15V | |||
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RFQ |
848
In-stock
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Vishay Siliconix | MOSFET N/P-CH 30V/8V 8SOIC | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 4.5W, 3.1W | 8-SOIC | N and P-Channel, Common Drain | Logic Level Gate | 30V, 8V | 12A, 8A | 17 mOhm @ 10A, 10V | 2V @ 250µA | 25nC @ 10V | 805pF @ 15V | |||
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RFQ |
3,102
In-stock
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Vishay Siliconix | MOSFET 2N-CH 30V 8A 8-SOIC | LITTLE FOOT® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.9W | 8-SO | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 8A | 20 mOhm @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | 950pF @ 15V | |||
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RFQ |
1,200
In-stock
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Vishay Siliconix | MOSFET 2N-CH 25V 8A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 25V | 8A | 18 mOhm @ 7A, 10V | 1.4V @ 250µA | 25nC @ 10V | 790pF @ 12.5V | |||
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RFQ |
1,100
In-stock
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Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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RFQ |
3,131
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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RFQ |
3,190
In-stock
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Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | |||
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RFQ |
2,708
In-stock
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ON Semiconductor | MOSFET 2P-CH 30V 2.34A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 730mW | 8-SOIC | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.34A | 85 mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | |||
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RFQ |
709
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | |||
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RFQ |
3,517
In-stock
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ON Semiconductor | MOSFET N/P-CH 30V 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | N and P-Channel | Logic Level Gate | 30V | 3.7A, 2.9A | 80 mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 320pF @ 10V | |||
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RFQ |
3,346
In-stock
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ON Semiconductor | MOSFET 2P-CH 30V 2.34A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 730mW | 8-SOIC | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.34A | 85 mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | |||
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RFQ |
2,621
In-stock
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Vishay Siliconix | MOSFET 2N-CH 30V 8A 8-SOIC | LITTLE FOOT® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.9W | 8-SO | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 8A | 20 mOhm @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | 950pF @ 15V | |||
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RFQ |
848
In-stock
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Vishay Siliconix | MOSFET N/P-CH 30V/8V 8SOIC | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 4.5W, 3.1W | 8-SOIC | N and P-Channel, Common Drain | Logic Level Gate | 30V, 8V | 12A, 8A | 17 mOhm @ 10A, 10V | 2V @ 250µA | 25nC @ 10V | 805pF @ 15V | |||
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RFQ |
3,102
In-stock
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Vishay Siliconix | MOSFET 2N-CH 30V 8A 8-SOIC | LITTLE FOOT® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.9W | 8-SO | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 8A | 20 mOhm @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | 950pF @ 15V | |||
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RFQ |
1,200
In-stock
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Vishay Siliconix | MOSFET 2N-CH 25V 8A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 25V | 8A | 18 mOhm @ 7A, 10V | 1.4V @ 250µA | 25nC @ 10V | 790pF @ 12.5V | |||
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RFQ |
1,100
In-stock
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Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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RFQ |
3,131
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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RFQ |
3,190
In-stock
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Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V |