Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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FDS8928A
Per Unit
$1.60
RFQ
RFQ
3,375
In-stock
ON Semiconductor MOSFET N/P-CH 30V/20V 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 900mW 8-SO N and P-Channel Logic Level Gate 30V, 20V 5.5A, 4A 30 mOhm @ 5.5A, 4.5V 1V @ 250µA 28nC @ 4.5V 900pF @ 10V
Default Photo
Per Unit
$1.28
RFQ
RFQ
651
In-stock
Infineon Technologies MOSFET 2N-CH 20V 10A/12A 8-SOIC HEXFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 20V 10A, 12A 9.3 mOhm @ 12A, 10V 2.55V @ 250µA 11nC @ 4.5V 900pF @ 10V
FDS8928A
Per Unit
$1.60
RFQ
RFQ
3,375
In-stock
ON Semiconductor MOSFET N/P-CH 30V/20V 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 900mW 8-SO N and P-Channel Logic Level Gate 30V, 20V 5.5A, 4A 30 mOhm @ 5.5A, 4.5V 1V @ 250µA 28nC @ 4.5V 900pF @ 10V
IRF9910TRPBF
Per Unit
$1.28
RFQ
RFQ
651
In-stock
Infineon Technologies MOSFET 2N-CH 20V 10A/12A 8-SOIC HEXFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 20V 10A, 12A 9.3 mOhm @ 12A, 10V 2.55V @ 250µA 11nC @ 4.5V 900pF @ 10V