Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
GLOBAL STOCKS
DMN2010UDZ-7
Per Unit
$1.13
RFQ
RFQ
1,979
In-stock
Diodes Incorporated MOSFET BVDSS: 8V 24V U-DFN2535-6 - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 700mW U-DFN2535-6 2 N-Channel (Dual) Common Drain Standard 24V 11A 7 mOhm @ 5.5A, 4.5V 1.5V @ 250µA 33.2nC @ 4.5V 2665pF @ 10V
FDMA6023PZT
Per Unit
$0.95
RFQ
RFQ
2,285
In-stock
ON Semiconductor MOSFET 2P-CH 20V 3.6A 6MICROFET PowerTrench® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 700mW 6-MicroFET (2x2) 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 60 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 885pF @ 10V
DMN2010UDZ-7
Per Unit
$1.13
RFQ
RFQ
1,979
In-stock
Diodes Incorporated MOSFET BVDSS: 8V 24V U-DFN2535-6 - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 700mW U-DFN2535-6 2 N-Channel (Dual) Common Drain Standard 24V 11A 7 mOhm @ 5.5A, 4.5V 1.5V @ 250µA 33.2nC @ 4.5V 2665pF @ 10V
FDMA6023PZT
Per Unit
$0.95
RFQ
RFQ
2,285
In-stock
ON Semiconductor MOSFET 2P-CH 20V 3.6A 6MICROFET PowerTrench® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 700mW 6-MicroFET (2x2) 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 60 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 885pF @ 10V