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12 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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|
RFQ |
1,702
In-stock
|
Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | |||
|
|
RFQ |
1,122
In-stock
|
Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | |||
|
|
RFQ |
3,061
In-stock
|
Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | TrenchFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | |||
|
|
RFQ |
1,437
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Digi-Reel® | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
|
|
RFQ |
1,261
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Cut Tape (CT) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
|
|
RFQ |
2,658
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Tape & Reel (TR) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
|
|
RFQ |
1,702
In-stock
|
Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | |||
|
|
RFQ |
1,122
In-stock
|
Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | |||
|
|
RFQ |
3,061
In-stock
|
Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | TrenchFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | |||
|
|
RFQ |
1,437
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Digi-Reel® | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
|
|
RFQ |
1,261
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Cut Tape (CT) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
|
|
RFQ |
2,658
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Tape & Reel (TR) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
