- Manufacture :
- Series :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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10 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
739
In-stock
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Microsemi Corporation | MOSFET 4N-CH 500V 37A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 312W | SP3 | 4 N-Channel (H-Bridge) | Standard | 500V | 37A | 120 mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V | |||
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RFQ |
1,661
In-stock
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Microsemi Corporation | MOSFET 2N-CH 500V 37A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 312W | SP3 | 2 N-Channel (Dual) | Standard | 500V | 37A | 120 mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V | |||
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RFQ |
1,301
In-stock
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Microsemi Corporation | MOSFET 4N-CH 500V 25A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 208W | SP1 | 4 N-Channel (H-Bridge) | Standard | 500V | 25A | 180 mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | 5448pF @ 25V | |||
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RFQ |
3,981
In-stock
|
IXYS | MOSFET 2N-CH 500V 13A I4-PAC | HiPerFET™, PolarHT™ | Active | Tube | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 132W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 500V | 13A | 270 mOhm @ 11A, 10V | 5V @ 1mA | 50nC @ 10V | 2630pF @ 25V | |||
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|
RFQ |
2,008
In-stock
|
Microsemi Corporation | MOSFET 4N-CH 500V 26A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 208W | SP3 | 4 N-Channel (H-Bridge) | Standard | 500V | 26A | 168 mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | |||
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|
RFQ |
739
In-stock
|
Microsemi Corporation | MOSFET 4N-CH 500V 37A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 312W | SP3 | 4 N-Channel (H-Bridge) | Standard | 500V | 37A | 120 mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V | |||
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|
RFQ |
1,661
In-stock
|
Microsemi Corporation | MOSFET 2N-CH 500V 37A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 312W | SP3 | 2 N-Channel (Dual) | Standard | 500V | 37A | 120 mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V | |||
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|
|
RFQ |
1,301
In-stock
|
Microsemi Corporation | MOSFET 4N-CH 500V 25A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 208W | SP1 | 4 N-Channel (H-Bridge) | Standard | 500V | 25A | 180 mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | 5448pF @ 25V | |||
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|
|
RFQ |
3,981
In-stock
|
IXYS | MOSFET 2N-CH 500V 13A I4-PAC | HiPerFET™, PolarHT™ | Active | Tube | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 132W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 500V | 13A | 270 mOhm @ 11A, 10V | 5V @ 1mA | 50nC @ 10V | 2630pF @ 25V | |||
|
|
RFQ |
2,008
In-stock
|
Microsemi Corporation | MOSFET 4N-CH 500V 26A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 208W | SP3 | 4 N-Channel (H-Bridge) | Standard | 500V | 26A | 168 mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | |||
