- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
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10 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
|
RFQ |
2,424
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
|
RFQ |
1,653
In-stock
|
Vishay Siliconix | MOSFET 2P-CH 20V 4A 8-SOIC | TrenchFET® | Active | Digi-Reel® | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 58 mOhm @ 4.8A, 4.5V | 1.4V @ 250µA | 26nC @ 10V | 665pF @ 10V | ||||
|
RFQ |
3,426
In-stock
|
Vishay Siliconix | MOSFET 2P-CH 20V 4A 1206-8 | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 4A | 100 mOhm @ 3.1A, 4.5V | 1V @ 250µA | 11nC @ 5V | 455pF @ 10V | ||||
|
RFQ |
3,582
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | ||||
|
RFQ |
3,572
In-stock
|
Vishay Siliconix | MOSFET 2P-CH 20V 4A 8SOIC | TrenchFET® | Active | Digi-Reel® | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 58 mOhm @ 4.8A, 4.5V | 1.4V @ 250µA | 26nC @ 10V | 665pF @ 10V | ||||
|
RFQ |
2,424
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
|
RFQ |
1,653
In-stock
|
Vishay Siliconix | MOSFET 2P-CH 20V 4A 8-SOIC | TrenchFET® | Active | Digi-Reel® | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 58 mOhm @ 4.8A, 4.5V | 1.4V @ 250µA | 26nC @ 10V | 665pF @ 10V | ||||
|
RFQ |
3,426
In-stock
|
Vishay Siliconix | MOSFET 2P-CH 20V 4A 1206-8 | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 3.1W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 4A | 100 mOhm @ 3.1A, 4.5V | 1V @ 250µA | 11nC @ 5V | 455pF @ 10V | ||||
|
RFQ |
3,582
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | ||||
|
RFQ |
3,572
In-stock
|
Vishay Siliconix | MOSFET 2P-CH 20V 4A 8SOIC | TrenchFET® | Active | Digi-Reel® | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 58 mOhm @ 4.8A, 4.5V | 1.4V @ 250µA | 26nC @ 10V | 665pF @ 10V |