- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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16 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
3,462
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V 6UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.4W | U-DFN2020-6 (Type B) | N and P-Channel | Standard | 20V | 4.7A, 3.2A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | |||
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RFQ |
3,021
In-stock
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Taiwan Semiconductor Corporation | MOSFET N/P-CH 20V 11.6A/9A 6TDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6.25W | 6-TDFN (2x2) | N and P-Channel | Standard | 20V | 11.6A (Tc), 9A (Tc) | 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V, 9.8nC @ 4.5V | 677pF @ 10V, 744pF @ 10V | |||
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RFQ |
1,599
In-stock
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Diodes Incorporated | MOSFET N/P-CH 20V X2DFN0806-6 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | 300mW | X2-DFN0806-6 | N and P-Channel | Standard | 20V | 455mA (Ta), 328mA (Ta) | 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.41nC @ 4.5V, 0.4nC @ 4.5V | 31pF @ 15V, 28.5pF @ 15V | |||
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|
RFQ |
2,476
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V 6UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.4W | U-DFN2020-6 (Type B) | N and P-Channel | Standard | 20V | 4.7A, 3.2A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | |||
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|
RFQ |
1,261
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Cut Tape (CT) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
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|
RFQ |
1,224
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V SOT563 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 450mW | SOT-563 | N and P-Channel | Standard | 20V | 1.03A, 700mA | 480 mOhm @ 200mA, 5V | 900mV @ 250µA | 0.5nC @ 4.5V | 37.1pF @ 10V | |||
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RFQ |
3,827
In-stock
|
Panasonic Electronic Components | MOSFET N/P-CH 20V WSMINI6-F1 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 700mW | WSMini6-F1-B | N and P-Channel | Standard | 20V | 1.9A, 1.2A | 105 mOhm @ 1A, 4V | 1.3V @ 1mA | - | 280pF @ 10V | |||
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|
|
RFQ |
2,531
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V SOT563 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 450mW | SOT-563 | N and P-Channel | Standard | 20V | 1.03A, 700mA | 480 mOhm @ 200mA, 5V | 900mV @ 250µA | 0.5nC @ 4.5V | 37.1pF @ 10V | |||
|
|
RFQ |
3,462
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V 6UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.4W | U-DFN2020-6 (Type B) | N and P-Channel | Standard | 20V | 4.7A, 3.2A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | |||
|
|
RFQ |
3,021
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N/P-CH 20V 11.6A/9A 6TDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6.25W | 6-TDFN (2x2) | N and P-Channel | Standard | 20V | 11.6A (Tc), 9A (Tc) | 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V, 9.8nC @ 4.5V | 677pF @ 10V, 744pF @ 10V | |||
|
|
|
RFQ |
1,599
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V X2DFN0806-6 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | 300mW | X2-DFN0806-6 | N and P-Channel | Standard | 20V | 455mA (Ta), 328mA (Ta) | 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.41nC @ 4.5V, 0.4nC @ 4.5V | 31pF @ 15V, 28.5pF @ 15V | |||
|
|
RFQ |
2,476
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V 6UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.4W | U-DFN2020-6 (Type B) | N and P-Channel | Standard | 20V | 4.7A, 3.2A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | |||
|
|
RFQ |
1,261
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Cut Tape (CT) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
|
|
RFQ |
1,224
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V SOT563 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 450mW | SOT-563 | N and P-Channel | Standard | 20V | 1.03A, 700mA | 480 mOhm @ 200mA, 5V | 900mV @ 250µA | 0.5nC @ 4.5V | 37.1pF @ 10V | |||
|
|
RFQ |
3,827
In-stock
|
Panasonic Electronic Components | MOSFET N/P-CH 20V WSMINI6-F1 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 700mW | WSMini6-F1-B | N and P-Channel | Standard | 20V | 1.9A, 1.2A | 105 mOhm @ 1A, 4V | 1.3V @ 1mA | - | 280pF @ 10V | |||
|
|
RFQ |
2,531
In-stock
|
Diodes Incorporated | MOSFET N/P-CH 20V SOT563 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 450mW | SOT-563 | N and P-Channel | Standard | 20V | 1.03A, 700mA | 480 mOhm @ 200mA, 5V | 900mV @ 250µA | 0.5nC @ 4.5V | 37.1pF @ 10V | |||
