- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
10 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
3,530
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4.8A MICROFET | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 750mW | 8-MLP, MicroFET (3x1.9) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.8A | 40 mOhm @ 4.8A, 10V | 3V @ 250µA | 5.6nC @ 5V | 465pF @ 15V | |||
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|
RFQ |
3,458
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4.9A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 750mW | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 20 mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 15V | |||
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|
RFQ |
894
In-stock
|
ON Semiconductor | MOSFET 2P-CH 20V 4.8A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 750mW | 8-SOIC | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.8A | 33 mOhm @ 6.2A, 4.5V | 1.2V @ 250µA | 35nC @ 4.5V | 1700pF @ 16V | |||
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|
RFQ |
1,180
In-stock
|
Texas Instruments | MOSFET 2P-CH 20V 1.6A 6WLP | NexFET™ | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 750mW | 6-DSBGA | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.5nC @ 4.5V | 410pF @ 10V | |||
|
|
RFQ |
1,606
In-stock
|
Texas Instruments | MOSFET 2P-CH 20V 1.6A 6WLP | NexFET™ | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 750mW | 6-DSBGA | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.5nC @ 4.5V | 410pF @ 10V | |||
|
|
RFQ |
3,530
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4.8A MICROFET | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 750mW | 8-MLP, MicroFET (3x1.9) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.8A | 40 mOhm @ 4.8A, 10V | 3V @ 250µA | 5.6nC @ 5V | 465pF @ 15V | |||
|
|
RFQ |
3,458
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4.9A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 750mW | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 20 mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 15V | |||
|
|
RFQ |
894
In-stock
|
ON Semiconductor | MOSFET 2P-CH 20V 4.8A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 750mW | 8-SOIC | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.8A | 33 mOhm @ 6.2A, 4.5V | 1.2V @ 250µA | 35nC @ 4.5V | 1700pF @ 16V | |||
|
|
RFQ |
1,180
In-stock
|
Texas Instruments | MOSFET 2P-CH 20V 1.6A 6WLP | NexFET™ | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 750mW | 6-DSBGA | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.5nC @ 4.5V | 410pF @ 10V | |||
|
|
RFQ |
1,606
In-stock
|
Texas Instruments | MOSFET 2P-CH 20V 1.6A 6WLP | NexFET™ | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 750mW | 6-DSBGA | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.5nC @ 4.5V | 410pF @ 10V | |||
