Power - Max :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
GLOBAL STOCKS
NTMD6P02R2G
Per Unit
$1.04
RFQ
RFQ
894
In-stock
ON Semiconductor MOSFET 2P-CH 20V 4.8A 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 750mW 8-SOIC 2 P-Channel (Dual) Logic Level Gate 20V 4.8A 33 mOhm @ 6.2A, 4.5V 1.2V @ 250µA 35nC @ 4.5V 1700pF @ 16V
NTMD6N02R2G
Per Unit
$0.85
RFQ
RFQ
1,449
In-stock
ON Semiconductor MOSFET 2N-CH 20V 3.92A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 730mW 8-SOIC 2 N-Channel (Dual) Logic Level Gate 20V 3.92A 35 mOhm @ 6A, 4.5V 1.2V @ 250µA 20nC @ 4.5V 1100pF @ 16V
NTMD6P02R2G
Per Unit
$1.04
RFQ
RFQ
894
In-stock
ON Semiconductor MOSFET 2P-CH 20V 4.8A 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 750mW 8-SOIC 2 P-Channel (Dual) Logic Level Gate 20V 4.8A 33 mOhm @ 6.2A, 4.5V 1.2V @ 250µA 35nC @ 4.5V 1700pF @ 16V
NTMD6N02R2G
Per Unit
$0.85
RFQ
RFQ
1,449
In-stock
ON Semiconductor MOSFET 2N-CH 20V 3.92A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 730mW 8-SOIC 2 N-Channel (Dual) Logic Level Gate 20V 3.92A 35 mOhm @ 6A, 4.5V 1.2V @ 250µA 20nC @ 4.5V 1100pF @ 16V