Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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SI4501BDY-T1-GE3
Per Unit
$0.76
RFQ
RFQ
848
In-stock
Vishay Siliconix MOSFET N/P-CH 30V/8V 8SOIC TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 4.5W, 3.1W 8-SOIC N and P-Channel, Common Drain Logic Level Gate 30V, 8V 12A, 8A 17 mOhm @ 10A, 10V 2V @ 250µA 25nC @ 10V 805pF @ 15V
AO4629
Per Unit
$0.62
RFQ
RFQ
2,253
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N/P-CH 30V 6A/5.5A 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SOIC N and P-Channel, Common Drain Logic Level Gate 30V 6A, 5.5A 30 mOhm @ 6A, 10V 2.4V @ 250µA 6.3nC @ 10V 310pF @ 15V
SI4501BDY-T1-GE3
Per Unit
$0.76
RFQ
RFQ
848
In-stock
Vishay Siliconix MOSFET N/P-CH 30V/8V 8SOIC TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 4.5W, 3.1W 8-SOIC N and P-Channel, Common Drain Logic Level Gate 30V, 8V 12A, 8A 17 mOhm @ 10A, 10V 2V @ 250µA 25nC @ 10V 805pF @ 15V
AO4629
Per Unit
$0.62
RFQ
RFQ
2,253
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N/P-CH 30V 6A/5.5A 8SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SOIC N and P-Channel, Common Drain Logic Level Gate 30V 6A, 5.5A 30 mOhm @ 6A, 10V 2.4V @ 250µA 6.3nC @ 10V 310pF @ 15V