- Packaging :
- Operating Temperature :
- Power - Max :
- Supplier Device Package :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
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40 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
|
RFQ |
1,266
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,973
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,775
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | ||||
|
RFQ |
2,704
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
2,766
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
1,003
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
3,316
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,553
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
683
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,572
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
1,920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
3,923
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
1,062
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 2.5A TSST8 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | 8-TSST | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 2.5A, 2.4A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | ||||
|
RFQ |
2,826
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 2.5A TSST8 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | 8-TSST | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 2.5A, 2.4A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | ||||
|
RFQ |
2,286
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 2.5A TSST8 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | 8-TSST | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 2.5A, 2.4A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | ||||
|
RFQ |
1,138
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A US6 | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | N and P-Channel | Logic Level Gate, 1.2V Drive | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
1,790
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 2.5A TSST8 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | 8-TSST | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 2.5A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | ||||
|
RFQ |
964
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 2.5A TSST8 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | 8-TSST | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 2.5A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | ||||
|
RFQ |
3,296
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 2.5A TSST8 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | 8-TSST | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 2.5A | 72 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 260pF @ 10V | ||||
|
RFQ |
1,266
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,973
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,775
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | ||||
|
RFQ |
2,704
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
2,766
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
1,003
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
3,316
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,553
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
683
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V |