- Packaging :
- Power - Max :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 200mA, 4V (6)
- 1 Ohm @ 300mA, 4V (6)
- 1.2 Ohm @ 200mA, 2.5V (6)
- 1.31 Ohm @ 100mA, 4.5V (2)
- 105 mOhm @ 2A, 4.5V (6)
- 143 mOhm @ 600MA, 4V (2)
- 180 mOhm @ 1.5A, 4.5V (12)
- 2.2 Ohm @ 100mA, 4.5V (2)
- 2.2 Ohm @ 200mA, 4.5V (8)
- 235 mOhm @ 800mA, 4.5V (6)
- 260 mOhm @ 1.3A, 4.5V (6)
- 3 Ohm @ 50mA, 4V (12)
- 300 mOhm @ 400mA, 4.5V (6)
- 32 mOhm @ 1A, 5V (2)
- 36 mOhm @ 4A, 4.5V (2)
- 43 mOhm @ 3.5A, 4.5V (6)
- 46 mOhm @ 2A, 4.5V (6)
- 62 mOhm @ 2.5A, 4.5V (6)
- 630 mOhm @ 200mA, 5V (14)
- 68 mOhm @ 2.5A, 4.5V (6)
- 72 mOhm @ 2.5A, 4.5V (18)
- 8 Ohm @ 50mA, 4V (2)
- 84 mOhm @ 2A, 4.5V (6)
- 95 mOhm @ 1.5A, 4.5V (6)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 110pF @ 10V (18)
- 12.2pF @ 3V (2)
- 1270pF @ 10V (6)
- 129pF @ 15V (6)
- 12pF @ 10V (2)
- 1400pF @ 10V (2)
- 1940pF @ 6V (2)
- 2000pF @ 6V (6)
- 25pF @ 10V (26)
- 2600pF @ 6V (6)
- 260pF @ 10V (18)
- 268pF @ 10V (2)
- 290pF @ 10V (6)
- 290pF @ 6V (6)
- 310pF @ 10V (6)
- 43pF @ 10V (2)
- 46pF @ 10V (14)
- 55pF @ 10V (6)
- 770pF @ 6V (6)
- 9.5pF @ 3V (12)
- Applied Filters :
154 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
|
RFQ |
1,890
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 330mA | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | ||||
|
RFQ |
3,368
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 500mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
3,599
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.25A 2-2N1D | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ||||
|
RFQ |
1,104
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.72A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300 mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
1,641
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.72A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300 mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,364
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.72A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300 mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,424
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
|
RFQ |
1,686
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
|
RFQ |
3,823
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
|
RFQ |
1,266
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,973
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,775
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | ||||
|
RFQ |
1,826
In-stock
|
Rohm Semiconductor | MOSFET 2N-CH 50V 0.2A EMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | 2 N-Channel (Dual) | Logic Level Gate, 1.2V Drive | 50V | 200mA | 2.2 Ohm @ 200mA, 4.5V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
1,582
In-stock
|
Rohm Semiconductor | MOSFET 2N-CH 20V 1.5A TUMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 1W | TUMT6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
774
In-stock
|
Rohm Semiconductor | MOSFET 2N-CH 20V 1.5A TUMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 1W | TUMT6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
1,570
In-stock
|
Rohm Semiconductor | MOSFET 2N-CH 20V 1.5A TUMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 1W | TUMT6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,704
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
2,766
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
1,003
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V 0.2A EMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | EMT6 | N and P-Channel | Logic Level Gate | 20V | 200mA | 1 Ohm @ 200mA, 4V | 1V @ 1mA | - | 25pF @ 10V | ||||
|
RFQ |
3,603
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 100mA | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | ||||
|
RFQ |
2,908
In-stock
|
Panasonic Electronic Components | MOSFET 2P-CH 12V 4.8A WMINI8-F1 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1W | WMini8-F1 | 2 P-Channel (Dual) | Standard | 12V | 4.8A | 32 mOhm @ 1A, 5V | 1V @ 1mA | - | 1400pF @ 10V | ||||
|
RFQ |
3,316
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,553
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
683
In-stock
|
Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 1W | UMT6 | N and P-Channel | Logic Level Gate | 20V, 12V | 1.5A, 1.3A | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | ||||
|
RFQ |
2,354
In-stock
|
Rohm Semiconductor | MOSFET 2P-CH 12V 1.3A TUMT6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 320mW | UMT6 | 2 P-Channel (Dual) | Logic Level Gate | 12V | 1.3A | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | ||||
|
RFQ |
3,496
In-stock
|
Rohm Semiconductor | MOSFET 2P-CH 12V 1.3A TUMT6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 320mW | UMT6 | 2 P-Channel (Dual) | Logic Level Gate | 12V | 1.3A | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | ||||
|
RFQ |
1,442
In-stock
|
Rohm Semiconductor | MOSFET 2P-CH 12V 1.3A TUMT6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 320mW | UMT6 | 2 P-Channel (Dual) | Logic Level Gate | 12V | 1.3A | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | ||||
|
RFQ |
3,280
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | ||||
|
RFQ |
1,381
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V |