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14 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
|
RFQ |
3,599
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.25A 2-2N1D | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ||||
|
RFQ |
2,994
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
|
RFQ |
847
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
|
RFQ |
2,390
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
|
RFQ |
635
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | ||||
|
RFQ |
788
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | ||||
|
RFQ |
3,888
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | ||||
|
RFQ |
3,599
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.25A 2-2N1D | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ||||
|
RFQ |
2,994
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
|
RFQ |
847
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
|
RFQ |
2,390
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
|
RFQ |
635
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | ||||
|
RFQ |
788
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | ||||
|
RFQ |
3,888
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V |