- Operating Temperature :
- Mounting Type :
- Rds On (Max) @ Id, Vgs :
-
- 25 mOhm @ 2A, 4V (6)
- 33 mOhm @ 4A, 4.5V (6)
- 36 mOhm @ 4A, 4.5V (2)
- 40 mOhm @ 3A, 4.5V (6)
- 45 mOhm @ 3.5A, 10V (6)
- 46 mOhm @ 2A, 4.5V (6)
- 46 mOhm @ 4A, 10V (2)
- 50 mOhm @ 6A, 10V (10)
- 53 mOhm @ 4A, 10V (2)
- 550 mOhm @ 2A, 4V (2)
- 550 Ohm @ 2A, 4V (2)
- 56 mOhm @ 4A, 10V (6)
- 60 mOhm @ 4A, 10V (8)
- 62 mOhm @ 2A, 4.5V (2)
- 68 mOhm @ 4A, 10V (2)
- 70 mOhm @ 4A, 10V (6)
- 84 mOhm @ 2A, 4.5V (6)
- 95 mOhm @ 1.5A, 4.5V (6)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
92 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
2,424
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | |||
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|
RFQ |
1,686
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | |||
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|
RFQ |
3,823
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | |||
|
|
RFQ |
1,626
In-stock
|
Sanken | MOSFET 3N/3P-CH 60V 4A 12-SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 12-SIP | 5W | 12-SIP w/fin | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 4A | 550 mOhm @ 2A, 4V | 2V @ 250µA | - | 150pF @ 10V | |||
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|
RFQ |
3,847
In-stock
|
Sanken | MOSFET 3N/3P-CH 60V 4A 12-SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 12-SIP | 4W | 12-SIP | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 60V | 4A | 550 Ohm @ 2A, 4V | 2V @ 250µA | - | 150pF @ 10V | |||
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|
RFQ |
1,598
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 100V 4A 8SOIC | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SOIC | 2 N-Channel (Dual) | Standard | 100V | 4A | 68 mOhm @ 4A, 10V | 2.8V @ 250µA | 12nC @ 10V | 415pF @ 50V | |||
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|
|
RFQ |
963
In-stock
|
Renesas Electronics America | MOSFET 2N-CH 20V 4A 6SON | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-PowerWDFN | 2.3W | 6-HUSON (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 4A | 62 mOhm @ 2A, 4.5V | - | 4.5nC @ 10V | 330pF @ 10V | |||
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|
RFQ |
1,854
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 46 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5nC @ 4.5V | 280pF @ 15V | |||
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|
RFQ |
2,687
In-stock
|
Diodes Incorporated | MOSFET 2P-CH 40V 4A 8SO | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.25W | 8-SO | 2 P-Channel (Dual) | Standard | 40V | 4A | 50 mOhm @ 6A, 10V | 3V @ 250µA | 13.9nC @ 10V | 674pF @ 20V | |||
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|
RFQ |
1,965
In-stock
|
Rohm Semiconductor | -30V PCH+PCH MIDDLE POWER MOSFET | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUDFN | 2W | HUML2020L8 | 2 P-Channel (Dual) | - | 30V | 4A | 70 mOhm @ 4A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 15V | |||
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RFQ |
2,431
In-stock
|
Rohm Semiconductor | 30V PCH+PCH MIDDLE POWER MOSFET | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUDFN | 2W | HUML2020L8 | 2 P-Channel (Dual) | - | 30V | 4A | 70 mOhm @ 4A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 15V | |||
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|
RFQ |
937
In-stock
|
Rohm Semiconductor | -30V PCH+PCH MIDDLE POWER MOSFET | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUDFN | 2W | HUML2020L8 | 2 P-Channel (Dual) | - | 30V | 4A | 70 mOhm @ 4A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 15V | |||
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|
RFQ |
3,876
In-stock
|
Nexperia USA Inc. | MOSFET 2N-CH 20V 4A 6HUSON | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 490mW | DFN2020-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4A | 40 mOhm @ 3A, 4.5V | 900mV @ 250µA | 21.7nC @ 4.5V | 660pF @ 10V | |||
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|
RFQ |
2,083
In-stock
|
Nexperia USA Inc. | MOSFET 2N-CH 20V 4A 6HUSON | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 490mW | DFN2020-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4A | 40 mOhm @ 3A, 4.5V | 900mV @ 250µA | 21.7nC @ 4.5V | 660pF @ 10V | |||
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RFQ |
2,103
In-stock
|
Nexperia USA Inc. | MOSFET 2N-CH 20V 4A 6HUSON | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 490mW | DFN2020-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4A | 40 mOhm @ 3A, 4.5V | 900mV @ 250µA | 21.7nC @ 4.5V | 660pF @ 10V | |||
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RFQ |
1,062
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4A 8SOIC | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 60 mOhm @ 4A, 10V | 3V @ 250µA | 16nC @ 10V | 400pF @ 20V | |||
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RFQ |
1,827
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 60 mOhm @ 4A, 10V | 3V @ 250µA | 16nC @ 10V | 400pF @ 20V | |||
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|
RFQ |
1,251
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 4A 8SOIC | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 60 mOhm @ 4A, 10V | 3V @ 250µA | 16nC @ 10V | 400pF @ 20V | |||
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RFQ |
3,280
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | |||
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|
RFQ |
1,381
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
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|
RFQ |
3,645
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
|
|
RFQ |
2,111
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
|
|
RFQ |
1,134
In-stock
|
Panasonic Electronic Components | MOSFET 2N-CH 20V 4A WSMINI8-F1-B | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 150mW | WSMini8-F1-B | 2 N-Channel (Dual) | Standard | 20V | 4A | 25 mOhm @ 2A, 4V | 1.3V @ 1mA | - | 1100pF @ 10V | |||
|
|
RFQ |
2,533
In-stock
|
Panasonic Electronic Components | MOSFET 2N-CH 20V 4A WSMINI8-F1-B | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 150mW | WSMini8-F1-B | 2 N-Channel (Dual) | Standard | 20V | 4A | 25 mOhm @ 2A, 4V | 1.3V @ 1mA | - | 1100pF @ 10V | |||
|
|
RFQ |
890
In-stock
|
Panasonic Electronic Components | MOSFET 2N-CH 20V 4A WSMINI8-F1-B | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 150mW | WSMini8-F1-B | 2 N-Channel (Dual) | Standard | 20V | 4A | 25 mOhm @ 2A, 4V | 1.3V @ 1mA | - | 1100pF @ 10V | |||
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|
RFQ |
3,582
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | |||
|
|
RFQ |
1,065
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | |||
|
|
RFQ |
2,451
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | |||
|
|
RFQ |
2,962
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 4A UDFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 2W | 6-UDFNB (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 4A | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | |||
|
|
RFQ |
2,009
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 4A UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 2W | 6-UDFNB (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 4A | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | |||
