- Manufacture :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
18 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
|
|
RFQ |
3,460
In-stock
|
Microsemi Corporation | MOSFET 4N-CH 100V 1A MO-036AB | - | Active | Bulk | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 1.4W | MO-036AB | 4 N-Channel | Standard | 100V | 1A | 700 mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | |||
|
|
|
RFQ |
3,988
In-stock
|
Microsemi Corporation | POWER MODULE - SIC MOSFET | - | Active | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 750W | SP3 | 4 N-Channel | Standard | 1200V (1.2kV) | 147A (Tc) | 17 mOhm @ 100A, 20V | 4V @ 30mA | 332nC @ 5V | 5576pF @ 1000V | |||
|
|
RFQ |
2,479
In-stock
|
Infineon Technologies | MOSFET 4N-CH 25V 16A/20A 41PQFN | - | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | - | 41-PQFN (6x8) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9 mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | |||
|
|
RFQ |
1,778
In-stock
|
Infineon Technologies | MOSFET 4N-CH 25V 16A/20A 41PQFN | - | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | - | 41-PQFN (6x8) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9 mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | |||
|
|
RFQ |
874
In-stock
|
Infineon Technologies | MOSFET 4N-CH 25V 16A/20A 41PQFN | - | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | - | 41-PQFN (6x8) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9 mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | |||
|
|
RFQ |
739
In-stock
|
Sanken | MOSFET 4N-CH 60V 7A 15-SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 4.8W | 15-ZIP | 4 N-Channel | Standard | 60V | 7A | 100 mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | |||
|
|
RFQ |
1,837
In-stock
|
Sanken | MOSFET 4N-CH 60V 7A 15-SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 15-SIP | 4.8W | 15-SIP | 4 N-Channel | Standard | 60V | 7A | 100 mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | |||
|
|
RFQ |
625
In-stock
|
Sanken | MOSFET 4N-CH 200V 10A 12SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 12-SIP | 5W | 12-SIP w/fin | 4 N-Channel | Logic Level Gate | 200V | 10A | 175 mOhm @ 5A, 10V | 4V @ 1mA | - | 850pF @ 10V | |||
|
|
RFQ |
2,716
In-stock
|
Sanken | MOSFET 4N-CH 100V 10A 12SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 12-SIP | 5W | 12-SIP w/fin | 4 N-Channel | Logic Level Gate | 100V | 10A | 80 mOhm @ 5A, 10V | 2V @ 250mA | - | 1630pF @ 10V | |||
|
|
|
RFQ |
3,460
In-stock
|
Microsemi Corporation | MOSFET 4N-CH 100V 1A MO-036AB | - | Active | Bulk | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 1.4W | MO-036AB | 4 N-Channel | Standard | 100V | 1A | 700 mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | |||
|
|
|
RFQ |
3,988
In-stock
|
Microsemi Corporation | POWER MODULE - SIC MOSFET | - | Active | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 750W | SP3 | 4 N-Channel | Standard | 1200V (1.2kV) | 147A (Tc) | 17 mOhm @ 100A, 20V | 4V @ 30mA | 332nC @ 5V | 5576pF @ 1000V | |||
|
|
RFQ |
2,479
In-stock
|
Infineon Technologies | MOSFET 4N-CH 25V 16A/20A 41PQFN | - | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | - | 41-PQFN (6x8) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9 mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | |||
|
|
RFQ |
1,778
In-stock
|
Infineon Technologies | MOSFET 4N-CH 25V 16A/20A 41PQFN | - | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | - | 41-PQFN (6x8) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9 mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | |||
|
|
RFQ |
874
In-stock
|
Infineon Technologies | MOSFET 4N-CH 25V 16A/20A 41PQFN | - | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | - | 41-PQFN (6x8) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9 mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | |||
|
|
RFQ |
739
In-stock
|
Sanken | MOSFET 4N-CH 60V 7A 15-SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 4.8W | 15-ZIP | 4 N-Channel | Standard | 60V | 7A | 100 mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | |||
|
|
RFQ |
1,837
In-stock
|
Sanken | MOSFET 4N-CH 60V 7A 15-SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 15-SIP | 4.8W | 15-SIP | 4 N-Channel | Standard | 60V | 7A | 100 mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | |||
|
|
RFQ |
625
In-stock
|
Sanken | MOSFET 4N-CH 200V 10A 12SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 12-SIP | 5W | 12-SIP w/fin | 4 N-Channel | Logic Level Gate | 200V | 10A | 175 mOhm @ 5A, 10V | 4V @ 1mA | - | 850pF @ 10V | |||
|
|
RFQ |
2,716
In-stock
|
Sanken | MOSFET 4N-CH 100V 10A 12SIP | - | Active | Tube | 150°C (TJ) | Through Hole | 12-SIP | 5W | 12-SIP w/fin | 4 N-Channel | Logic Level Gate | 100V | 10A | 80 mOhm @ 5A, 10V | 2V @ 250mA | - | 1630pF @ 10V | |||
