- Manufacture :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
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- FET Feature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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24 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
3,858
In-stock
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 2300W | SP6 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10 mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | |||
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RFQ |
3,373
In-stock
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2140W | Module | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | |||
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RFQ |
968
In-stock
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 937W | SP3 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | |||
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RFQ |
3,426
In-stock
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | 470W | SP1 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A, 20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V | |||
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RFQ |
3,702
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
1,320
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
2,038
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
1,678
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
2,953
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
1,001
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
3,073
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
2,119
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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|
RFQ |
3,858
In-stock
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 2300W | SP6 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10 mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | |||
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|
RFQ |
3,373
In-stock
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2140W | Module | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | |||
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|
RFQ |
968
In-stock
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 937W | SP3 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | |||
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|
RFQ |
3,426
In-stock
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | 470W | SP1 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A, 20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V | |||
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|
RFQ |
3,702
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
1,320
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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RFQ |
2,038
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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|
RFQ |
1,678
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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|
RFQ |
2,953
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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|
RFQ |
1,001
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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|
RFQ |
3,073
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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|
RFQ |
2,119
In-stock
|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V |