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- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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34 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
|
RFQ |
2,417
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 0.4A/0.2A US6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ||||
|
RFQ |
1,440
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 0.4A/0.2A US6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ||||
|
RFQ |
1,417
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 0.4A/0.2A US6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ||||
|
RFQ |
1,266
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,973
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,775
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | ||||
|
RFQ |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 500MA UF6 | - | Active | - | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Standard | 30V | 500mA (Ta) | 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V | 1.1V @ 100µA | - | 245pF @ 10V, 218pF @ 10V | ||||
|
RFQ |
2,572
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
1,920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
3,923
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
2,166
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 40V 6.1A/5.3A 8SOP | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 450mW | 8-SOP | N and P-Channel | Logic Level Gate | 40V | 6.1A, 5.3A | 32 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 24nC @ 10V | 850pF @ 10V | ||||
|
RFQ |
1,988
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 9A/7.4A 8SOP | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 450mW | 8-SOP | N and P-Channel | Logic Level Gate | 30V | 9A, 7.4A | 17 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | ||||
|
RFQ |
1,437
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Digi-Reel® | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | ||||
|
RFQ |
1,261
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Cut Tape (CT) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | ||||
|
RFQ |
2,658
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Tape & Reel (TR) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - | ||||
|
RFQ |
1,138
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A US6 | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | N and P-Channel | Logic Level Gate, 1.2V Drive | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
2,417
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 0.4A/0.2A US6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ||||
|
RFQ |
1,440
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 0.4A/0.2A US6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ||||
|
RFQ |
1,417
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 0.4A/0.2A US6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700 mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ||||
|
RFQ |
1,266
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,973
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
|
RFQ |
3,775
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | ||||
|
RFQ |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 500MA UF6 | - | Active | - | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Standard | 30V | 500mA (Ta) | 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V | 1.1V @ 100µA | - | 245pF @ 10V, 218pF @ 10V | ||||
|
RFQ |
2,572
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
1,920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
3,923
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
|
RFQ |
2,166
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 40V 6.1A/5.3A 8SOP | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 450mW | 8-SOP | N and P-Channel | Logic Level Gate | 40V | 6.1A, 5.3A | 32 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 24nC @ 10V | 850pF @ 10V | ||||
|
RFQ |
1,988
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 9A/7.4A 8SOP | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 450mW | 8-SOP | N and P-Channel | Logic Level Gate | 30V | 9A, 7.4A | 17 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V |