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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Operating Temperature	Mounting Type	Package / Case	Power - Max	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
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	IRF7350PBF		RFQ	PDF RFQ	2,985 In-stock	Infineon Technologies	MOSFET N/P-CH 100V 8SOIC		HEXFET®	Obsolete	Tube	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	2W	8-SO	N and P-Channel	Standard	100V	2.1A, 1.5A	210 mOhm @ 2.1A, 10V	4V @ 250µA	28nC @ 10V	380pF @ 25V
	IRF7380PBF	Per Unit $0.52	RFQ	PDF RFQ	1,739 In-stock	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC		HEXFET®	Not For New Designs	Tube	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	2W	8-SO	2 N-Channel (Dual)	Logic Level Gate	80V	3.6A	73 mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V
	IRF7350PBF		RFQ	PDF RFQ	2,985 In-stock	Infineon Technologies	MOSFET N/P-CH 100V 8SOIC		HEXFET®	Obsolete	Tube	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	2W	8-SO	N and P-Channel	Standard	100V	2.1A, 1.5A	210 mOhm @ 2.1A, 10V	4V @ 250µA	28nC @ 10V	380pF @ 25V
	IRF7380PBF	Per Unit $0.52	RFQ	PDF RFQ	1,739 In-stock	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC		HEXFET®	Not For New Designs	Tube	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	2W	8-SO	2 N-Channel (Dual)	Logic Level Gate	80V	3.6A	73 mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V

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