Power - Max :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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IRFH4253DTRPBF
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2,840
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Infineon Technologies MOSFET 2N-CH 25V 64A/145A PQFN HEXFET® Not For New Designs Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 31W, 50W PQFN (5x6) 2 N-Channel (Dual) Logic Level Gate 25V 64A, 145A 3.2 mOhm @ 30A, 10V 2.1V @ 35µA 15nC @ 4.5V 1314pF @ 13V
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RFQ
RFQ
1,970
In-stock
Infineon Technologies MOSFET 2N-CH 30V 9.7A 8-SOIC HEXFET® Not For New Designs Digi-Reel® -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 9.7A 15.5 mOhm @ 9.7A, 10V 2.35V @ 25µA 9nC @ 4.5V 760pF @ 15V
IRFH4253DTRPBF
RFQ
RFQ
2,840
In-stock
Infineon Technologies MOSFET 2N-CH 25V 64A/145A PQFN HEXFET® Not For New Designs Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 31W, 50W PQFN (5x6) 2 N-Channel (Dual) Logic Level Gate 25V 64A, 145A 3.2 mOhm @ 30A, 10V 2.1V @ 35µA 15nC @ 4.5V 1314pF @ 13V
IRF8313TRPBF
RFQ
RFQ
1,970
In-stock
Infineon Technologies MOSFET 2N-CH 30V 9.7A 8-SOIC HEXFET® Not For New Designs Digi-Reel® -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 9.7A 15.5 mOhm @ 9.7A, 10V 2.35V @ 25µA 9nC @ 4.5V 760pF @ 15V