Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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TSM300NB06CR
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Taiwan Semiconductor Corporation 60V 27A 30MO N-CHANNEL POWER MOS $proddata[$product['id']]['package']   Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 56W (Tc) N-Channel 60V 6A (Ta), 27A (Tc) 30 mOhm @ 6A, 10V 4.5V @ 250µA 18nC @ 10V 1110pF @ 30V ±20V 10V
TSM300NB06CR
RFQ
VIEW
RFQ
Taiwan Semiconductor Corporation 60V 27A 30MO N-CHANNEL POWER MOS $proddata[$product['id']]['package']   Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 56W (Tc) N-Channel 60V 6A (Ta), 27A (Tc) 30 mOhm @ 6A, 10V 4.5V @ 250µA 18nC @ 10V 1110pF @ 30V ±20V 10V
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 500MA TO92   Obsolete MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92 2.5W (Tc) N-Channel 600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V ±30V 10V
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Taiwan Semiconductor Corporation MOSFET N-CH 600V TO92   Obsolete MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2.5W (Tc) N-Channel 600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V ±30V 10V
TSM4NB60CH C5G
Per Unit
$0.89
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VIEW
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Taiwan Semiconductor Corporation 600V N CHANNEL MOSFET $proddata[$product['id']]['package']   Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 50W (Tc) N-Channel 600V 4A 2.5 Ohm @ 2A, 10V 4.5V @ 250µA 14.5nC @ 10V 500pF @ 25V ±30V 10V
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RFQ
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15
In-stock
Vishay Siliconix MOSFET N-CH 125V $proddata[$product['id']]['package'] TrenchFET® Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 5.1W (Ta), 65.8W (Tc) N-Channel 125V 8.5A (Ta), 31A (Tc) 29.8 mOhm @ 8.5A, 10V 4.5V @ 250µA 15.3nC @ 10V 535pF @ 62.5V ±20V 10V
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Per Unit
$1.55
RFQ
RFQ
15
In-stock
Vishay Siliconix MOSFET N-CH 125V $proddata[$product['id']]['package'] TrenchFET® Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 5.1W (Ta), 65.8W (Tc) N-Channel 125V 8.5A (Ta), 31A (Tc) 29.8 mOhm @ 8.5A, 10V 4.5V @ 250µA 15.3nC @ 10V 535pF @ 62.5V ±20V 10V
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Per Unit
$0.60
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Vishay Siliconix MOSFET N-CH 125V $proddata[$product['id']]['package'] TrenchFET® Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 5.1W (Ta), 65.8W (Tc) N-Channel 125V 8.5A (Ta), 31A (Tc) 29.8 mOhm @ 8.5A, 10V 4.5V @ 250µA 15.3nC @ 10V 535pF @ 62.5V ±20V 10V
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RFQ
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200
In-stock
STMicroelectronics N-CHANNEL 100V 12A STRIPFET F7 P STripFET™ F7 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 52W (Tc) N-Channel 100V 44A (Tc) 13.3 mOhm @ 6A, 10V 4.5V @ 250µA 30nC @ 10V 1820pF @ 50V ±20V 10V
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Per Unit
$2.41
RFQ
RFQ
200
In-stock
STMicroelectronics N-CHANNEL 100V 12A STRIPFET F7 P STripFET™ F7 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 52W (Tc) N-Channel 100V 44A (Tc) 13.3 mOhm @ 6A, 10V 4.5V @ 250µA 30nC @ 10V 1820pF @ 50V ±20V 10V
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Per Unit
$1.08
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STMicroelectronics N-CHANNEL 100V 12A STRIPFET F7 P STripFET™ F7 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 52W (Tc) N-Channel 100V 44A (Tc) 13.3 mOhm @ 6A, 10V 4.5V @ 250µA 30nC @ 10V 1820pF @ 50V ±20V 10V