- Series :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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11 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Taiwan Semiconductor Corporation | 60V 27A 30MO N-CHANNEL POWER MOS | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 3.1W (Ta), 56W (Tc) | N-Channel | 60V | 6A (Ta), 27A (Tc) | 30 mOhm @ 6A, 10V | 4.5V @ 250µA | 18nC @ 10V | 1110pF @ 30V | ±20V | 10V | |||||
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VIEW | Taiwan Semiconductor Corporation | 60V 27A 30MO N-CHANNEL POWER MOS | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 3.1W (Ta), 56W (Tc) | N-Channel | 60V | 6A (Ta), 27A (Tc) | 30 mOhm @ 6A, 10V | 4.5V @ 250µA | 18nC @ 10V | 1110pF @ 30V | ±20V | 10V | |||||
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VIEW | Taiwan Semiconductor Corporation | MOSFET N-CH 600V 500MA TO92 | Obsolete | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 | 2.5W (Tc) | N-Channel | 600V | 500mA (Tc) | 10 Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | 138pF @ 25V | ±30V | 10V | ||||||
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VIEW | Taiwan Semiconductor Corporation | MOSFET N-CH 600V TO92 | Obsolete | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 | 2.5W (Tc) | N-Channel | 600V | 500mA (Tc) | 10 Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | 138pF @ 25V | ±30V | 10V | ||||||
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VIEW | Taiwan Semiconductor Corporation | 600V N CHANNEL MOSFET | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 50W (Tc) | N-Channel | 600V | 4A | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 500pF @ 25V | ±30V | 10V | |||||
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RFQ |
15
In-stock
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Vishay Siliconix | MOSFET N-CH 125V | $proddata[$product['id']]['package'] | TrenchFET® | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 5.1W (Ta), 65.8W (Tc) | N-Channel | 125V | 8.5A (Ta), 31A (Tc) | 29.8 mOhm @ 8.5A, 10V | 4.5V @ 250µA | 15.3nC @ 10V | 535pF @ 62.5V | ±20V | 10V | |||
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RFQ |
15
In-stock
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Vishay Siliconix | MOSFET N-CH 125V | $proddata[$product['id']]['package'] | TrenchFET® | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 5.1W (Ta), 65.8W (Tc) | N-Channel | 125V | 8.5A (Ta), 31A (Tc) | 29.8 mOhm @ 8.5A, 10V | 4.5V @ 250µA | 15.3nC @ 10V | 535pF @ 62.5V | ±20V | 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 125V | $proddata[$product['id']]['package'] | TrenchFET® | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 5.1W (Ta), 65.8W (Tc) | N-Channel | 125V | 8.5A (Ta), 31A (Tc) | 29.8 mOhm @ 8.5A, 10V | 4.5V @ 250µA | 15.3nC @ 10V | 535pF @ 62.5V | ±20V | 10V | ||||
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RFQ |
200
In-stock
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STMicroelectronics | N-CHANNEL 100V 12A STRIPFET F7 P | STripFET™ F7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 52W (Tc) | N-Channel | 100V | 44A (Tc) | 13.3 mOhm @ 6A, 10V | 4.5V @ 250µA | 30nC @ 10V | 1820pF @ 50V | ±20V | 10V | ||||
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RFQ |
200
In-stock
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STMicroelectronics | N-CHANNEL 100V 12A STRIPFET F7 P | STripFET™ F7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 52W (Tc) | N-Channel | 100V | 44A (Tc) | 13.3 mOhm @ 6A, 10V | 4.5V @ 250µA | 30nC @ 10V | 1820pF @ 50V | ±20V | 10V | ||||
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VIEW | STMicroelectronics | N-CHANNEL 100V 12A STRIPFET F7 P | STripFET™ F7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 52W (Tc) | N-Channel | 100V | 44A (Tc) | 13.3 mOhm @ 6A, 10V | 4.5V @ 250µA | 30nC @ 10V | 1820pF @ 50V | ±20V | 10V |