- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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15 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW | Rohm Semiconductor | MOSFET N-CH 20V 2A WEMT6 | $proddata[$product['id']]['package'] | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | ±10V | 1.5V, 4.5V | |||||
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VIEW | Rohm Semiconductor | MOSFET N-CH 20V 2A WEMT6 | $proddata[$product['id']]['package'] | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | ±10V | 1.5V, 4.5V | |||||
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VIEW | Toshiba Semiconductor and Storage | MOSFET N-CH 30V ES6 | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | 20V | 2A (Ta) | 126 mOhm @ 1A, 4V | 1V @ 1mA | 3.4nC @ 10V | 195pF @ 10V | ±10V | 1.5V, 4V | ||||||
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RFQ |
2,145
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | |||
|
RFQ |
2,145
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | |||
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VIEW | Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | ||||
|
RFQ |
5,990
In-stock
|
Toshiba Semiconductor and Storage | SMALL PCH LOW ON RESISTANCE MOSF | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 3.2A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | ±8V | 1.5V, 4.5V | |||
|
RFQ |
5,990
In-stock
|
Toshiba Semiconductor and Storage | SMALL PCH LOW ON RESISTANCE MOSF | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 3.2A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | ±8V | 1.5V, 4.5V | |||
|
RFQ |
3,000
In-stock
|
Toshiba Semiconductor and Storage | SMALL PCH LOW ON RESISTANCE MOSF | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 3.2A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | ±8V | 1.5V, 4.5V | |||
|
RFQ |
5,930
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW RON NCH MOSFETS ID: 4A | $proddata[$product['id']]['package'] | U-MOSVII-H | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | N-Channel | 30V | 4A (Ta) | 56 mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2nC @ 4.5V | 200pF @ 10V | +12V, -8V | 1.8V, 4.5V | |||
|
RFQ |
5,930
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW RON NCH MOSFETS ID: 4A | $proddata[$product['id']]['package'] | U-MOSVII-H | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | N-Channel | 30V | 4A (Ta) | 56 mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2nC @ 4.5V | 200pF @ 10V | +12V, -8V | 1.8V, 4.5V | |||
|
RFQ |
3,000
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW RON NCH MOSFETS ID: 4A | $proddata[$product['id']]['package'] | U-MOSVII-H | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | N-Channel | 30V | 4A (Ta) | 56 mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2nC @ 4.5V | 200pF @ 10V | +12V, -8V | 1.8V, 4.5V | |||
|
RFQ |
5,508
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V | |||
|
RFQ |
5,508
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V | |||
|
RFQ |
3,000
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V |