Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Rohm Semiconductor RS1P600BE IS A POWER MOSFET WITH Active MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 35W (Tc) N-Channel 100V 17.5A (Ta), 60A (Tc) 9.7 mOhm @ 17.5A, 10V 4V @ 500µA 33nC @ 10V 2200pF @ 50V ±20V 10V
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$3.08
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Rohm Semiconductor RS1P600BE IS A POWER MOSFET WITH Active MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 35W (Tc) N-Channel 100V 17.5A (Ta), 60A (Tc) 9.7 mOhm @ 17.5A, 10V 4V @ 500µA 33nC @ 10V 2200pF @ 50V ±20V 10V
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$1.30
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Rohm Semiconductor RS1P600BE IS A POWER MOSFET WITH Active MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 35W (Tc) N-Channel 100V 17.5A (Ta), 60A (Tc) 9.7 mOhm @ 17.5A, 10V 4V @ 500µA 33nC @ 10V 2200pF @ 50V ±20V 10V