Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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ON Semiconductor MOSFET N-CH 60V 20A DPAK $proddata[$product['id']]['package']   Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.88W (Ta), 60W (Tj) N-Channel 60V 20A (Ta) 46 mOhm @ 10A, 10V 4V @ 250µA 30nC @ 10V 1015pF @ 25V ±20V 10V
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ON Semiconductor MOSFET N-CH 60V 20A DPAK $proddata[$product['id']]['package']   Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.36W (Ta), 60W (Tj) N-Channel 60V 20A (Ta) 48 mOhm @ 10A, 5V 2V @ 250µA 32nC @ 5V 990pF @ 25V ±15V 5V
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250
In-stock
Texas Instruments 20-V P-CHANNEL NEXFET POWER MOSF NexFET™ Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WSON (2x2) 2.9W (Ta) P-Channel 20V 20A (Ta) 23.9 mOhm @ 5A, 4.5V 1.1V @ 250µA 4.7nC @ 4.5V 655pF @ 10V ±8V 1.8V, 4.5V
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$0.68
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250
In-stock
Texas Instruments 20-V P-CHANNEL NEXFET POWER MOSF NexFET™ Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WSON (2x2) 2.9W (Ta) P-Channel 20V 20A (Ta) 23.9 mOhm @ 5A, 4.5V 1.1V @ 250µA 4.7nC @ 4.5V 655pF @ 10V ±8V 1.8V, 4.5V
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Per Unit
$0.42
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250
In-stock
Texas Instruments 20-V P-CHANNEL NEXFET POWER MOSF NexFET™ Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WSON (2x2) 2.9W (Ta) P-Channel 20V 20A (Ta) 23.9 mOhm @ 5A, 4.5V 1.1V @ 250µA 4.7nC @ 4.5V 655pF @ 10V ±8V 1.8V, 4.5V