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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3A VS-8 | $proddata[$product['id']]['package'] | U-MOSIII | Obsolete | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 49 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | 590pF @ 10V | ±12V | 2V, 4.5V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 30V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 46.3W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 27.6A (Ta), 40A (Tc) | 2.7 mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | 2455pF @ 15V | +20V, -16V | 4.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 30V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 46.3W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 27.6A (Ta), 40A (Tc) | 2.7 mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | 2455pF @ 15V | +20V, -16V | 4.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 30V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 46.3W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 27.6A (Ta), 40A (Tc) | 2.7 mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | 2455pF @ 15V | +20V, -16V | 4.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 30V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 50W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 32A (Ta), 60A (Tc) | 2.7 mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | 2455pF @ 15V | +20V, -16V | 4.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 30V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 50W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 32A (Ta), 60A (Tc) | 2.7 mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | 2455pF @ 15V | +20V, -16V | 4.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 30V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 50W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 32A (Ta), 60A (Tc) | 2.7 mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | 2455pF @ 15V | +20V, -16V | 4.5V, 10V | |||
