- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Taiwan Semiconductor Corporation | 600V N CHANNEL MOSFET | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 50W (Tc) | N-Channel | 600V | 4A | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 500pF @ 25V | ±30V | 10V | ||||
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RFQ |
500
In-stock
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Infineon Technologies | MOSFET N-CH 950V 14A TO251 | $proddata[$product['id']]['package'] | CoolMOS™ P7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 104W (Tc) | N-Channel | 950V | 14A (Tc) | 450 mOhm @ 7.2A, 10V | 3.5V @ 360µA | 35nC @ 10V | 1053pF @ 400V | ±20V | 10V | ||
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RFQ |
490
In-stock
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Infineon Technologies | MOSFET N-CH 950V 9A TO251 | $proddata[$product['id']]['package'] | CoolMOS™ P7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 73W (Tc) | N-Channel | 950V | 9A (Tc) | 750 mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | 712pF @ 400V | ±20V | 10V | ||
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RFQ |
480
In-stock
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Infineon Technologies | MOSFET N-CH 950V 6A TO251 | $proddata[$product['id']]['package'] | CoolMOS™ P7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 52W (Tc) | N-Channel | 950V | 6A (Tc) | 1.2 Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | 478pF @ 400V | ±20V | 10V | ||
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RFQ |
490
In-stock
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Infineon Technologies | MOSFET N-CH 950V 4A TO251 | $proddata[$product['id']]['package'] | CoolMOS™ P7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 37W (Tc) | N-Channel | 950V | 4A (Tc) | 2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10nC @ 10V | 330pF @ 400V | ±20V | 10V | ||
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RFQ |
455
In-stock
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Infineon Technologies | MOSFET N-CH 950V 2A TO251 | $proddata[$product['id']]['package'] | CoolMOS™ P7 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 22W (Tc) | N-Channel | 950V | 2A (Tc) | 3.7 Ohm @ 800mA, 10V | 3.5V @ 40µA | 6nC @ 10V | 196pF @ 400V | ±20V | 10V | ||
